Electron Microscope

FERA3

The world’s first fully integrated Xe plasma source focused ion beam (FIB) with scanning electron microscopy (SEM) enables extremely high ion currents up to 2 μA which results in increased milling speeds that can be up to 50 times faster compared to conventional Ga source FIBs.


FERA3

PRODUCT BROCHURE

FERA3 brochure

The world’s first fully integrated Xe plasma FIB-SEM. Download FERA3 brochure!

PDF – 6.1 MB

KEY FEATURES

  • The unique Wide Field Optics™ design with a proprietary Intermediate Lens (IML) offers a variety of working and display modes with enhanced field of view or depth of focus
  • Real time In-Flight Beam Tracing™ for performance and beam optimization. Also includes direct and continual control of beam parameters.
  • Fully automated electron optics set-up and alignment
  • Rapid imaging with rates up to 20 ns

Specification

Electron GunHigh Brightness Schottky Emitter
Resolution
SE1.2nm at 30keV / 1nm at 30keV (Optional In-Beam detector)
1.5nm at 3keV (Optional Beam Deceleration Mode)
BSE2.0nm at 30keV
Magnification2x - 1,000,000x (LM),
1x - 1,000,000x (XM/GM)
Accelerating Voltage200eV to 30keV / 50eV to 30kV with BDM option
Probe Current1pA to 200nA (Optional 1pA to 400nA)
Stage5-axis fully Compucentric stage

Extremely powerful Xe plasma FIB column

ECR-generated Xe plasma ion source FIB column for achieving the most challenging large-scale milling tasks in unbeatable short times frames

  • 50x faster than Ga LMIS FIBs.
  • Ion beam range current of 1 pA to 2 µA and resolution of < 25 nm
  • Newly developed high resolution Xe plasma FIB column (Optional) achieving resolution of < 15 nm for extended patterning capabilities
  • Large-mass xenon ions with larger FIB current range for ultra-fast sputtering even with­out gas-assisted enhancement
  • Significant reduction in ion implantation compared to Ga LMIS FIBs
  • Rocking Stage - An effective and optimised polishing strategy against curtaining effect

Ion Optics

Ion columnHR i-FIBi-FIB
Ion GunXe plasma ion source
Accelerating voltage3kV to 30kV
Probe current1 pA to 1 µA1 pA to 2 µA
Resolution (at 30 keV)< 15 nm< 25 nm
MagnificationMinimum 150 × at coincidence point and 10 kV (corresponding to 1 mm field of view), maximum 1,000,000 ×
SEM-FIB coincidence atWD 9 mm (FERA3) / WD 5 mm (XEIA3) for SEM – WD 12 mm for FIB
SEM-FIB angle55°


Application

Semiconductors & Microelectronics

Semiconductors & Microelectronics

Material Science

Material Sciences

Life Sciences

Life Sciences

Earth Sciences

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