GAIA3

PRODUCT BROCHURE

GAIA3 brochure

Extraordinary Ultra-High Resolution imaging and extremely precise nanoengineering. Download GAIA3 brochure!

PDF – 6.1 MB

KEY FEATURES

TriLens™ - objective system: unique combination of three-lens objective and crossover-free beam path
Advanced detection system with multiple SE and BSE detectors - TriSE™ and TriBE™
Triglav™ - Ultimate ultra-high resolution at low beam energy: 1 nm at 1 keV and 0.7 nm at 15 keV
Electron beam currents up to 400 nA and rapid beam energy changes
Optimised column geometry for accommodating large wafers up to 8”

Specification

Electron Optics
Electron Gun	High brightness Schottky emitter
Resolution
Standard mode In-Beam SE	0.7nm at 15keV 1.4nm at 1keV 1.7nm at 500eV
Beam Deceleration Mode (Option)	1.0nm at 1 keV - SE (BDM)
Magnification at 30keV	4 x - 1,000,000 x
Probe Current	2 pA to 400 nA

High-performance Ga FIB column for ultimate precision in nanoengineering.

Probe current: 1 pA 50 nA
Resolution: < 2.5 nm at 30 kV at SEM-FIB coincidence point
Cobra guarantees the shortest time to result in cross-sectioning and TEM sample preparation
Ideal for 3D ultra-structural studies of biological specimens such as tissue and whole cells
Excellent performance at low kV ideal for polishing ultra-thin lamella and for reducing amorphous layers

Ion Optics

Ion column	Cobra
Ion Gun	Ga LIMS
Resolution	<2.5 nm at 30Kev (at SEM-FIB coincidence point)
Probe current	1 pA to 50nA
Accelerating Voltage	0.5kV to 30kV
Magnification	Minimum 150 × at coincidence point and 10 kV (corresponding to 1 mm field of view), maximum 1,000,000 ×
SEM-FIB coincidence at	WD 5 mm for SEM – WD 12 mm for FIB
SEM-FIB angle	55°

Semiconductors & Microelectronics

Material Science

Life Sciences

Earth Sciences