FERA3

PRODUCT BROCHURE

FERA3 brochure

The world’s first fully integrated Xe plasma FIB-SEM. Download FERA3 brochure!

PDF – 6.1 MB

KEY FEATURES

The unique Wide Field Optics™ design with a proprietary Intermediate Lens (IML) offers a variety of working and display modes with enhanced field of view or depth of focus
Real time In-Flight Beam Tracing™ for performance and beam optimization. Also includes direct and continual control of beam parameters.
Fully automated electron optics set-up and alignment
Rapid imaging with rates up to 20 ns

Specification

Electron Gun	High Brightness Schottky Emitter
Resolution
SE	1.2nm at 30keV / 1nm at 30keV (Optional In-Beam detector) 1.5nm at 3keV (Optional Beam Deceleration Mode)
BSE	2.0nm at 30keV
Magnification	2x - 1,000,000x (LM), 1x - 1,000,000x (XM/GM)
Accelerating Voltage	200eV to 30keV / 50eV to 30kV with BDM option
Probe Current	1pA to 200nA (Optional 1pA to 400nA)
Stage	5-axis fully Compucentric stage

ECR-generated Xe plasma ion source FIB column for achieving the most challenging large-scale milling tasks in unbeatable short times frames

50x faster than Ga LMIS FIBs.
Ion beam range current of 1 pA to 2 µA and resolution of < 25 nm
Newly developed high resolution Xe plasma FIB column (Optional) achieving resolution of < 15 nm for extended patterning capabilities
Large-mass xenon ions with larger FIB current range for ultra-fast sputtering even without gas-assisted enhancement
Significant reduction in ion implantation compared to Ga LMIS FIBs
Rocking Stage - An effective and optimised polishing strategy against curtaining effect

Ion Optics

Ion column	HR i-FIB	i-FIB
Ion Gun	Xe plasma ion source
Accelerating voltage	3kV to 30kV
Probe current	1 pA to 1 µA	1 pA to 2 µA
Resolution (at 30 keV)	< 15 nm	< 25 nm
Magnification	Minimum 150 × at coincidence point and 10 kV (corresponding to 1 mm field of view), maximum 1,000,000 ×
SEM-FIB coincidence at	WD 9 mm (FERA3) / WD 5 mm (XEIA3) for SEM – WD 12 mm for FIB
SEM-FIB angle	55°

Semiconductors & Microelectronics

Material Science

Life Sciences

Earth Sciences

FERA3The world’s first fully integrated Xe plasma source focused ion beam (FIB) with scanning electron microscopy (SEM) enables extremely high ion currents up to 2 μA which results in increased milling speeds that can be up to 50 times faster compared to conventional Ga source FIBs.